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DMN601DWK
1.4
1.2
1.0
V GS = 10V
8V
6V
5V
4V
3V
10V
8V
6V
5V
1.00
V DS = 10V
Pulsed
T A = 125 ° C
0.8
0.6
4V
0.10
T A = 75 ° C
0.4
T A = 25 ° C
0.2
3V
T A = -25 ° C
0
0
1 2 3 4
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0.01
1
1.5 2 2.5 3 3.5 4 4.5
V GS , GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
2
V DS = 10V
I D = 1mA
Pulsed
10
V GS = 10V
Pulsed
1.5
1
1
T A = 125 ° C
T A = 150°C
T A = 85 ° C
T A = -55°C
0.5
T A = 25°C
T A = 0 ° C
T A = -25°C
0
-50
-25
0 25 50
75 100
125 150
0.1
0.001
0.01
0.1
1
T CH , CHANNEL TEMPERATURE (°C)
Figure 3 Gate Threshold Voltage vs. Channel Temperature
10
I D, DRAIN CURRENT (A)
Figure 4 Static Drain-Source On-Resistance vs. Drain Current
7
T A = 150 ° C
T A = 125 ° C
T A = 85°C
V GS = 5V
Pulsed
6
5
I D = 300mA
T A = 25°C
Pulsed
4
1
3
T A = 25°C
T A = 0 ° C
T A = -25 ° C
2
I D = 150mA
1
0.1
0
0.001
0.01
0.1
1
0
2
4 6 8 10
12 14
16 18 20
I D , DRAIN CURRENT (A)
Figure 5 Static Drain-Source On-Resistance vs. Drain Current
V GS, GATE SOURCE VOLTAGE (V)
Figure 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
DMN601DWK
Document number: DS30656 Rev. 7 - 2
3 of 5
www.diodes.com
January 2014
? Diodes Incorporated
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